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| HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C SOT-227B miniBLOC Ex G Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter Features * International standard package SOT-227B * Aluminium nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Very high current, fast switching IGBT * Low VCE(sat) for minimum on-state conduction losses * MOS Gate turn-on drive simplicity * Low collector-to-case capacitance (< 50 pF) * Low package inductance (< 5 nH) - easy to drive and to protect Applications Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 125C 5 200 1 100 2.5 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages * Easy to mount with 2 screws * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97531A (7/00) (c) 2000 IXYS All rights reserved 1-4 IXGN 50N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 4000 VCE = 25 V, VGE = 0 V, f = 1 MHz 340 100 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 40 50 30 200 150 3 50 25 3 280 250 4.2 180 50 100 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.50 K/W 0.05 K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGN 50N60B 100 TJ = 25C 80 VGE = 15V 13V 11V 9V 7V 200 160 TJ = 25C VGE = 15V 13V 11V 9V IC - Amperes 60 40 20 5V IC - Amperes 120 7V 80 40 5V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics 100 Figure 2. Extended Output Characteristics 1.6 VCE (sat) - Normalized 80 TJ = 125C V = 15V GE 13V 11V 9V VGE = 15V 1.4 1.2 1.0 IC = 25A IC = 50A IC = 100A IC - Amperes 60 40 7V 0.8 0.6 0.4 25 5V 20 0 0 1 2 3 4 5 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 100 VCE = 10V 10000 f = 1Mhz Ciss 80 Capacitance - pF IC - Amperes 1000 60 40 TJ = 125C TJ = 25C 100 Coss Crss 20 0 0 2 4 6 8 10 VGE - Volts 10 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 5. Admittance Curves Figure 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-4 IXGN 50N60B 6 TJ = 125C 12 E(ON) 6 5 TJ = 125C E(ON) IC = 100A E(OFF) 12 10 5 E(ON) - millijoules RG = 4.7 10 E(OFF) - milliJoules E(OFF) - millijoules 4 E(OFF) 8 6 4 2 0 100 E(ON) - millijoules 4 3 2 1 E(ON) IC =25A E(ON) E(OFF) E(OFF) 8 6 IC = 50A 3 2 1 0 0 20 40 60 80 4 2 0 0 0 10 20 30 40 50 60 IC - Amperes RG - Ohms Figure 7. Dependence of EON and EOFF on IC. 16 IC =25A VCE = 250V Figure 8. Dependence of EON and EOFF on RG. 600 100 12 IC - Amperes VGE - Volts dV/dt < 5V/ns 4 1 0 0 20 40 60 80 100 120 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Figure 11. IGBT Transient Thermal Resistance (c) 2000 IXYS All rights reserved 8 10 TJ = 125C RG = 6.2 1 4-4 |
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